document number: 83654 www.vishay.com revision 17-august-01 2?02 dual channel ild621/621gb quad channel ilq621/621gb multi-channel phototransistor optocoupler features alternate source to tlp621-2/-4 and tlp621gb-2/-4 current transfer ratio (ctr) at i f = 5.0 ma ild/q621: 50% min. ild/q621gb: 100% min. saturated current transfer ratio (ctr sat ) at i f =1.0 ma ild/q621: 60% typ. ild/q621gb: 30% min. high collector-emitter voltage, bv ceo =70 v dual and quad packages feature: ? reduced board space ? lower pin and parts count ? better channel to channel ctr match ? improved common mode rejection field-effect stable by trios (transparent ion shield) isolation test voltage from double molded package, 5300 v rms underwriters lab file #e52744 vde 0884 available with option 1 maximum ratings (each channel) emitter reverse voltage ............................................. 6.0 v forward current .......................................... 60 ma surge current ................................................ 1.5 a power dissipation...................................... 100 mw derate from 25 c ................................ 1.33 mw/ c detector collector-emitter reverse voltage .................. 70 v collector current ......................................... 50 ma collector current (t <1.0 ms)...................... 100 ma power dissipation...................................... 150 mw derate from 25 c................................. ?.0 mw/ c package isolation test voltage (t=1.0 sec.) ........................................ 5300 v rms package dissipation ild620/gb.............. 400 mw derate from 25 c............................... 5.33 mw/ c package dissipation ilq620/gb .............. 500 mw derate from 25 c............................... 6.67 mw/ c creepage ................................................ 7.0 mm clearance ................................................. 7.0 min isolation resistance v io =500 v, t a =25 c.............................. 10 12 ? v io =500 v, t a =100 c............................ 10 11 ? storage temperature.................. ?5 c to +150 c operating temperature ............... ?5 c to +100 c junction temperature................................... 100 c soldering temperature (2.0 mm from case bottom) ...................... 260 c v de description the ild/q621 and ild/q621gb are multi-channel phototransistor optocou- plers that use gaas irled emitters and high gain npn silicon phototransis- tors. these devices are constructed using over/under leadframe optical coupling and double molded insulation technology. this assembly process offers a withstand test voltage of 7500 vdc. the ild/q621gb is well suited for cmos interfacing given the ctr ce sat of 30% minimum at i f of 1.0 ma. high gain linear operation is guaranteed by a minimum ctr ce of 100% at 5.0 ma. the ild/q621 has a guaranteed ctr ce of 50% minimum at 5.0 ma. the transparent ion shield insures stable dc gain in applications such as power supply feedback circuits, where constant dc v io voltages are present. .045 (1.14) .030 (.76) 4 typ. .100 (2.54) typ. .022 (.56) .018 (.46) .150 (3.81) .130 (3.30) .035 (.89) .020 (.51) (.79) .031 .050 (1.27) .265 (6.81) .255 (6.48) pin one id .790 (20.07) .779 (19.77) pin one id .268 (6.81) .255 (6.48) .390 (9.91) .379 (9.63) .045 (1.14) .030 (0.76) .100 (2.54) typ. .022 (.56) .018 (.46) .150 (3.81) .130 (3.30) .035 (.89 ) .020 (.51 ) 4 3 2 1 .031 (0.79) (1.27) .050 5 6 78 8 7 6 5 c e c e a k a k 1 2 3 4 10 typ. 3 ? .305 (7.75) typ. .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 10 typ. 3 ? .305 (7.75) typ. .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 c e c e c e c e a k a k a k a k a=anode k=cathode c=collector a=anode k=cathode c=collector dimensions in inches (mm)
document number: 83654 www.vishay.com revision 17-august-01 2?03 characteristics switching times parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.0 1.15 1.3 v i f =10 ma reverse current i r 0.01 10 a v r =6.0 v capacitance c o ?0 pf v f =0 v, f=1.0 mhz thermal resistance, junction to lead r thjl 750 k/w detector capacitance c ce 6.8 pf v ce =5.0 v, f=1.0 mhz collector-emitter leakage current i ceo 10 100 na v ce =24 v collector-emitter leakage current i ceo 2.0 50 a t a =85 c, v ce =24 v thermal resistance, junction to lead r thjl 500 k/w package transfer characteristics channel/channel ctr match ctrx/ctry 1 to 1 3 to 1 i f =5.0 ma, v ce =5.0 v ild/q621 saturated current transfer ratio ctr ce sat ?0 % i f =1.0 ma, v ce =0.4 v current transfer ratio ctr ce 50 80 600 % i f =5.0 ma, v ce =5.0 v collector-emitter saturation voltage v ce sat 0.4 v i f =8.0 ma, i ce =2.4 ma ild/q621gb saturated current transfer ratio ctr ce sat 30% i f =1.0 ma, v ce =0.4 v current transfer ratio (collector-emitter) ctr ce 100 200 600 % i f =5.0 ma, v ce =5.0 v collector-emitter saturation voltage v ce sat 0.4 v i f =1.0 ma, i ce =0.2 ma isolation and insulation common mode rejection, output high cmh 5000 v/ sv cm =50 v p-p , r l =1.0 k ? , i f =0 ma common mode rejection, output low cml 5000 v/ sv cm =50 v p-p , r l =1.0 k ? , i f =10 ma common mode coupling capacitance c cm 0.01 pf package capacitance c i-o 0.8 pf v io =0 v, f=1.0 mhz insulation resistance r s 10 12 ? v io =500 v, t a =25 c channel to channel insulation 500 vac figure 2. non-saturated switching timing characteristic symbol typ. unit test condition on time t on 3.0 s i f =?0 ma v cc =5.0 v r l =75 ? 50% of v pp rise time t r 2.0 off time t off 2.3 fall time t f 2.0 propagation h-l t phl 1.1 propagation l-h t plh 2.5 f=10 khz, df=50 % v o v cc =5 v r l =75 ? i f =10 ma figure 1. non-saturated switching timing v 0 i f t phl t s t r t f t d 50% t plh
document number: 83654 www.vishay.com revision 17-august-01 2 204 figure 6. maximum led power dissipation figure 7. forward voltage versus forward current figure 8. collector-emitter current versus temperature and led current --60 -40 -20 0 20 40 60 80 100 200 100 0 50 ta - ambient temperature - c p led - led power - mw 150 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = 85 c t a = 85 c t a = 85 c 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 85 c i f - led current - ma i ce - collector current - ma 25 c figure 3. saturated switching timing figure 4. saturated switching timing figure 5. maximum led current versus ambient temperature characteristic symbol typ. unit test condition on time t on 4.3 s i f =10 ma v cc =5.0 v r l =1.0 k ? v th =1.5 v rise time t r 2.8 off time t off 2.5 fall time t f 11 propagation h-l t phl 2.6 propagation l-h t plh 7.2 i f v o t r t d t plh t f t s t phl v th =1.5 v r l v o i f =10 ma f=10 khz, df=50% v cc =5 v 60 40 20 0 20 40 60 80 100 120 100 80 60 40 0 20 t a - ambient temperature c i f - maximum led current - ma tj (max)=100 c
document number: 83654 www.vishay.com revision 17-august-01 2 205 figure 13. normalization factor for non-saturated and saturated ctr t a =50 c versus i f figure 14. normalization factor for non-saturated and saturated ctr t a =70 c versus i f figure 15. normalization factor for non-saturated and saturated ctr t a =100 c versus i f figure 16. peak led current versus pulse duration, 100 10 1 .1 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 50 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce 100 10 1 .1 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 70 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce 100 10 1 .1 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 100 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10000 1000 100 10 t - led pulse duration - s if(pk) - peak led current - ma .005 df = /t .05 .02 .01 .1 .2 .5 duty factor t figure 9. collector-emitter leakage versus temperature figure 10. propagation delay versus collector load resistor figure 11. maximum detector power dissipation figure 12. maximum collector current versus collector voltage -20 0 20 40 60 80 100 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 t a - ambient temperature - c i ceo - collector-emitter - na typical v ce = 10 v .1 1 10 100 1 10 100 1000 1.0 1.5 2.0 2.5 r l - collector load resistor - ? t plh - propagation low-high - s t plh t phl t a = 25 c, i f = 10 ma v cc = 5.0 v, v th = 1.5 v 60 40 20 0 20 40 60 80 100 200 100 0 50 t a - ambient temperature - c p det - detector power - mw 150 .1 1 10 100 1000 100 10 1 .1 v ce - collector-emitter voltage - v i ce - collector current - ma rth=500 c/w 25 c 50 c 75 c 90 c
|
